Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2008-01-22
2008-01-22
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S424000, C438S438000, C438S700000, C438S701000, C438S713000, C257SE21546
Reexamination Certificate
active
07320927
ABSTRACT:
The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer225and a hardmask layer215located over the substrate205with plasma, trimming the photoresist layer225with a plasma to create an exposed portion215aof the hardmask layer215, removing the exposed portion215awith a plasma to create a trench guide opening227, and creating a trench230through the trench guide opening227with a plasma.
REFERENCES:
patent: 4487652 (1984-12-01), Almgren
patent: 5770483 (1998-06-01), Kadosh et al.
patent: 6093621 (2000-07-01), Tseng
patent: 6218309 (2001-04-01), Miller et al.
patent: 6261921 (2001-07-01), Yen et al.
patent: 6271143 (2001-08-01), Mendicino
patent: 6696366 (2004-02-01), Morey et al.
patent: 6812145 (2004-11-01), Ma
patent: 2002/0132422 (2002-09-01), Ranade et al.
patent: 2002/0166838 (2002-11-01), Nagarajan
Deloach Juanita
Smith Brian A.
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilczewski M.
LandOfFree
In situ hardmask pullback using an in situ plasma resist... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with In situ hardmask pullback using an in situ plasma resist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ hardmask pullback using an in situ plasma resist... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2781559