Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-30
2010-12-14
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S629000, C438S640000, C438S678000, C257S698000, C257SE23011, C257SE23131, C257SE23174, C257SE21585
Reexamination Certificate
active
07851342
ABSTRACT:
The formation of electronic assemblies including a die having through vias is described. In one embodiment, a method includes providing Si die including a first surface and a second surface opposite the first surface, and forming a via extending through the Si die from the first surface to the second surface. The via is formed to have a larger width at the first surface than at the second surface, the larger width at the first surface being no less than 100 microns. The method also includes placing a plurality of particles in the via, wherein at least some of the particles comprise a polymer and at least some of the particles comprise a metal. The method also includes heating the die and the particles in the via to cross-link at least part of the polymer in the via, and cooling the die to solidify the polymer and form a electrically conductive composite including the cross-linked polymer and the metal in the via. Other embodiments are described and claimed.
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Eitan Amram
Xu Dingying
Garber Charles D
Intel Corporation
Konrad Raynes & Victor LLP
Raynes Alan S.
Sene Pape
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