In situ finishing control

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Reexamination Certificate

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C451S041000, C451S285000, C439S690000, C216S038000, C216S088000, C252S079100

Reexamination Certificate

active

07131890

ABSTRACT:
An apparatus and method of using a in situ finishing information for finishing semiconductor wafers is described. The method uses operative sensors such as friction sensors for detecting and improving control during finishing. The method can aid control of finishing while using in situ finishing information and cost of manufacture information. The method can aid control of finishing while using organic lubricants, lubricating films, and lubricating boundary layers in the operative finishing interface. The method can generally aid control of differential finishing such as when using differential lubricating films such as lubricating boundary layers. Control can generally aid improvement of differential finishing of semiconductor wafers. Planarization and localized finishing can used with in situ finishing information such as differential lubricating boundary layer for finishing. Defects can generally be reduced using the in situ friction finishing information method. Real time improvements to cost of manufacture semiconductor wafer manufacture can be made by tracking and using current in process cost of manufacture information and cost of manufacture parameters. The semiconductor wafers can be tracked individually or by process group such as a process batch. Abrasive finishing surfaces can be used. Tribochemical finishing can generally be improved.

REFERENCES:
patent: 4421068 (1983-12-01), Aral
patent: 4544375 (1985-10-01), Rehmat et al.
patent: 5023045 (1991-06-01), Watanabe et al.
patent: 5069002 (1991-12-01), Sandhu et al.
patent: 5107445 (1992-04-01), Jensen
patent: 5137544 (1992-08-01), Medellin
patent: 5154512 (1992-10-01), Schietinger
patent: 5166080 (1992-11-01), Schietinger
patent: 5196353 (1993-03-01), Sandhu
patent: 5232875 (1993-08-01), Tuttle et al.
patent: 5308438 (1994-05-01), Cote
patent: 5314843 (1994-05-01), Yu
patent: 5340370 (1994-08-01), Cadien
patent: 5352277 (1994-10-01), Sasaki
patent: 5413941 (1995-05-01), Koos
patent: 5456627 (1995-10-01), Jackson et al.
patent: 5486995 (1996-01-01), Krist et al.
patent: 5521814 (1996-05-01), Teran et al.
patent: 5537325 (1996-07-01), Iwakiri et al.
patent: 5595526 (1997-01-01), Yau
patent: 5597442 (1997-01-01), Chen
patent: 5609511 (1997-03-01), Moriyama
patent: 5609517 (1997-03-01), Lofaro
patent: 5614444 (1997-03-01), Farkas
patent: 5624300 (1997-04-01), Kishii et al.
patent: 5639388 (1997-06-01), Kimura
patent: 5643060 (1997-07-01), Sandhu
patent: 5647952 (1997-07-01), Chen
patent: 5667629 (1997-09-01), Pan
patent: 5679063 (1997-10-01), Kimura et al.
patent: 5682309 (1997-10-01), Bartusiak et al.
patent: 5685766 (1997-11-01), Mattingly
patent: 5691895 (1997-11-01), Kurtzberg et al.
patent: 5695384 (1997-12-01), Beratan
patent: 5695660 (1997-12-01), Litvak
patent: 5722879 (1998-03-01), Cronin
patent: 5728308 (1998-03-01), Muroyama
patent: 5733176 (1998-03-01), Robinson
patent: 5733819 (1998-03-01), Kodama
patent: 5735036 (1998-04-01), Barr
patent: 5738562 (1998-04-01), Doan
patent: 5740033 (1998-04-01), Wassick et al.
patent: 5743784 (1998-04-01), Birang
patent: 5749769 (1998-05-01), Church
patent: 5759917 (1998-06-01), Grover et al.
patent: 5762537 (1998-06-01), Sandhu
patent: 5774633 (1998-06-01), Baba et al.
patent: 5783489 (1998-07-01), Kaufman
patent: 5799286 (1998-08-01), Morgan et al.
patent: 5830280 (1998-11-01), Sato
patent: 5833519 (1998-11-01), Moore
patent: 5842909 (1998-12-01), Sandhu
patent: 5858813 (1999-01-01), Scherber
patent: 5860847 (1999-01-01), Sakurai et al.
patent: 5876266 (1999-03-01), Miller
patent: 5876490 (1999-03-01), Ronay
patent: 5885137 (1999-03-01), Ploessl
patent: 5885334 (1999-03-01), Suzuki
patent: 5906754 (1999-05-01), Appel
patent: 5910041 (1999-06-01), Duescher
patent: 5916855 (1999-06-01), Avanzino
patent: 5919082 (1999-07-01), Walker
patent: 5934978 (1999-08-01), Burke
patent: 5945347 (1999-08-01), Wright
patent: 5954975 (1999-09-01), Cadien
patent: 5954997 (1999-09-01), Kaufman
patent: 5958794 (1999-09-01), Bruxuoort
patent: 5968280 (1999-10-01), Ronay
patent: 5972793 (1999-10-01), Tseng
patent: 5985045 (1999-11-01), Kobayashi
patent: 5987398 (1999-11-01), Halverson et al.
patent: 5993298 (1999-11-01), Duescher
patent: 6038540 (2000-03-01), Krist et al.
patent: 6056781 (2000-05-01), Wassick et al.
patent: 6110214 (2000-08-01), Klimasauskas
patent: 6121143 (2000-09-01), Messner et al.
patent: 6128540 (2000-10-01), Van Der Vegt et al.
patent: 6157916 (2000-12-01), Hoffman
patent: 6197604 (2001-03-01), Miller
patent: 6246972 (2001-06-01), Klimasauskass
patent: 6257953 (2001-07-01), Gittis et al.
patent: 6263255 (2001-07-01), Tan et al.
patent: 6267644 (2001-07-01), Molnar
patent: 6268641 (2001-07-01), Yano et al.
patent: 6283829 (2001-09-01), Molnar
patent: 6291349 (2001-09-01), Molnar
patent: 6293851 (2001-09-01), Molnar
patent: 6298470 (2001-10-01), Breiner et al.
patent: 6408227 (2002-06-01), Singhvi et al.
patent: 6526547 (2003-02-01), Breiner et al.
patent: 6567718 (2003-05-01), Campbell et al.
patent: 6568989 (2003-05-01), Molnar
patent: 2002/0010563 (2002-01-01), Ratteree et al.
patent: 2002/0123818 (2002-09-01), Yamada et al.
patent: 2002/0199082 (2002-12-01), Shanmugasundram et al.
patent: 2003/0046130 (2003-03-01), Golightly et al.
patent: 2003/0061004 (2003-03-01), Discenzo
patent: 2003/0083757 (2003-05-01), Card et al.
patent: 2003/0093762 (2003-05-01), Reitman et al.
patent: WO 98/08919 (1998-03-01), None
patent: WO 99/64527 (1999-12-01), None
patent: WO 00/00561 (2000-01-01), None
patent: WO 00/00567 (2000-01-01), None
6204181 withdrawn from issue, Molnar, filed Nov. 5, 1999, published Mar. 20, 2001, U.S. Appl. No. 09/438,180.
Berman, Mike et al., “Review of in Situ and in Line Detection for CMP Applic.”, Semiconductor Fabtech, 8thedition, pp. 267-274.
Bibby, Thomas, “Endpoint Detection for CMP”, Journal of Electronic Materials, vol. 27, #10, 1998, pp. 1073-1081.
“Understanding and Using Cost of Ownership”, Wright Williams & Kelly, Dublin, CA, rev 0595-1.
“Intermetal Dielectric Cost-of-Ownership”, Case, C.B. and Case, C.J.,Semiconductor International, Jun. 1995, pp 83-88.
“Using COO to select Nitride PECVD clean cycle”, Anderson, Bob, et al., Semiconductor International, Oct. 1993, pp 86-88.
“The application of cost of ownership simulation to wafer sort and final test”, Jimez, D. W. et al., SEMI's Manufacturing test Conference, Jul., 1993.
“Reducing Tungsten Deposition equipment cost of ownership through in situ contamination prevention and reduction”, Burghard, R. W., et al.,Microcontamination, Oct. 1992, pp 23-25.
“Reducing ion-implant equipment cost of ownship through in situ contamination prevention and control”, Burghard, R. W., et al.,Microcontamination, Sep. 1992, pp 27-30.
“Reducing tungsten-etch equipment cost of ownership through in situcontamination prevention and reduction”, Burghard, R. W., et al.,Microcontamination, Jun. 1992, pp 33-36.
“Reducing process equipment cost of ownership through in situ contamination prevention and reduction”, Burghard, R. W., et al.,Microcontamination, May 1992, pp 21-24.
“Cost of ownership for inspection equipment”, Dance D. and Bryson, P., Sematech, Austin, Texas, date unknown.

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