In situ Etching of inorganic dielectric anti-reflective coating

Details In situ Etching of inorganic dielectric anti-reflective coating In situ Etching of inorganic dielectric anti-reflective coating

1997-10-22

2000-08-15

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438585, 438592, 438721, 438723, 438724, 438736, 438738, H01L 21302

Patent

active

061036323

ABSTRACT:
The present invention is embodied in a method and apparatus for etching dielectric layers and inorganic ARC's without the need for removing the substrate being processed from the processing chamber and without the need for intervening processing steps such as chamber cleaning operations (in situ process). A layer and/or a multi-layer film deposited on a substrate, such as silicon, is located within a processing chamber. The substrate has a base, an underlying layer above the base, an overlying layer above the underlying layer, and a top dielectric anti-reflective coating (DARC) layer formed on the overlying layer. In the preferred method, first, the DARC layer and the overlying layer is etched by a first process gas. Next, the underlying layer is etched by a second process gas.

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