In-situ epitaxial passivation for resistivity measurement

Details In-situ epitaxial passivation for resistivity measurement In-situ epitaxial passivation for resistivity measurement

1997-01-24

1999-02-16

Trinh, Michael

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438934, 438974, H01L 2166

Patent

active

058720170

ABSTRACT:
A method for preparing an epitaxial silicon wafer in a reactor is provided. The method comprises the steps of depositing an epitaxial layer on a surface of a silicon wafer contained in the reactor at an elevated temperature; purging the reactor with hydrogen after the epitaxial deposition; and cooling the reactor to an appropriate temperature which allows hydrogen passivation of the surface of the epitaxial layer. This prevents the formation of an oxide layer on the surface of the epitaxial layer for a sufficient amount of time to allow an accurate measurement of a carrier density profile of the epitaxial silicon wafer.

REFERENCES:
patent: 5227330 (1993-07-01), Agnello et al.
patent: 5373806 (1994-12-01), Logar
patent: 5403434 (1995-04-01), Moslehi
patent: 5578504 (1996-11-01), Mitani et al.
"Low-temperature in situ cleaning of silicon (100) surface by electron cyclotron resonance hydrogen plasma", Heung-Sik Tae, et al., J. Vac. Sci Technol., vol. 13, No. 3, May/Jun. 1995, pp. 908-913.
"Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe", ASTM, Designation: F 1392-93, pp. 601-613, 1993.

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