In situ differential thermal analysis for HgCdTe LPE

Details In situ differential thermal analysis for HgCdTe LPE In situ differential thermal analysis for HgCdTe LPE

1981-12-01

1984-10-02

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG72, 156624, C30B 1910

Patent

active

044746407

ABSTRACT:
For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE reactor in a furnace. During heating or cooling, differential sensing of a pair of thermocouples (in the melt and in the neutral body) will show an accelerated change at transformation points, since at these points the temperature of the melt will be changed by the energy of the physical change, while that of the neutral body remains subject only to passive heat transfer. Thus, the actual liquidus temperature of each melt can be measured with extreme precision, and isothermal or programmed cooling methods of LPE can be precisely and reliably controlled under production conditions.

REFERENCES:
patent: 3858433 (1975-01-01), Nearhoof
patent: 4046509 (1977-09-01), Backerud
patent: 4315477 (1982-02-01), Wang et al.
Wang et al., 127 J. Electrochem. Soc.: Solid-State Science 175, Jan. 1980.
Mroczkowski et al., 128 J. Electrochem. Soc.: Solid-State Science (3, 1981).
Harman, 9 J. Electronic Materials 945, 6, 1980.
Bowers, 27 IEEE Trans'ns on Electron Devices 52 1, 1980.

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