In-situ deposition and doping process for polycrystalline...

Details In-situ deposition and doping process for polycrystalline... In-situ deposition and doping process for polycrystalline...

2005-03-15

2005-03-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S532000, C438S564000, C438S592000

Reexamination Certificate

active

06867113

ABSTRACT:
An in-situ deposition and doping method for polycrystalline silicon layers of semiconductor devices. A first intermediate layer of in-situ doped polycrystalline silicon is grown, and a second additional layer of polycrystalline silicon is grown with a lower doping level than that of the first intermediate layer of polycrystalline silicon. In one preferred method, the second doping level is substantially lower than the first doping level. Additionally, a semiconductor memory device of the type having a gate stack is provided. The memory device includes at least one gate layer of polycrystalline silicon, and the gate layer of polycrystalline silicon is formed from a first intermediate layer of polycrystalline silicon with a first doping level, and an overlaying second additional layer of polycrystalline silicon with a second doping level that is lower than the first doping level. In a preferred embodiment, the second doping level is substantially lower than the first doping level.

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