In situ conductivity monitoring technique for chemical/mechanica

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156636, 156637, 156645, 156662, 156345, 156903, H01L 21306, B44C 122

Patent

active

047938951

ABSTRACT:
An apparatus and method for monitoring the conductivity of a semiconductor wafer during the course of a polishing process. A polishing pad that contacts the wafer has an active electrode and at least one passive electrode, both of which are embedded in the polishing pad. A detecting device is connected to the active and passive electrodes for monitoring the current between the electrodes as the wafer is lapped by the polishing pad. The etch endpoint of the wafer is determined as a function of the magnitude of the current flow.

REFERENCES:
patent: 3063206 (1982-11-01), Meyerhoff
patent: 3874959 (1975-04-01), Hoekstra et al.
patent: 4197676 (1980-04-01), Sauerland
patent: 4199902 (1980-04-01), Sauerland
patent: 4207137 (1980-06-01), Tretola
patent: 4340456 (1982-07-01), Robinson et al.
patent: 4358338 (1982-11-01), Downey et al.
patent: 4407094 (1983-10-01), Bennett et al.
patent: 4514436 (1985-04-01), Moerschel
patent: 4602981 (1986-07-01), Chen et al.
patent: 4622094 (1986-11-01), Otsubo
IBM Technical Disclosure Bulletin, vol. 19, No. 4, Sep. 1976, by J. R. Skobern, "Nodule Removal Tool".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

In situ conductivity monitoring technique for chemical/mechanica does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with In situ conductivity monitoring technique for chemical/mechanica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ conductivity monitoring technique for chemical/mechanica will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-866686

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.