Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1998-03-03
2000-08-08
Dang, Thi
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
118 501, 118724, 156345, 216 66, 134 13, 438708, B08B 700
Patent
active
060986379
ABSTRACT:
The invention provides generally a method and an apparatus for in situ cleaning of a surface in a semiconductor substrate processing chamber which operates quickly and reduces the downtime for chamber cleaning. The apparatus comprises an ultraviolet (UV) radiation plate moveable between a cleaning position and a storage position and at least one UV radiation source disposed on the UV radiation plate. Preferably, the apparatus includes a reflector disposed adjacent the UV radiation source to focus emitted UV radiation and a rotary actuator pivotally attached to a transport arm to move the UV radiation plate between the cleaning position and the storage position. The method comprises: providing a UV radiation plate having at least one UV radiation source disposed thereon, moving the UV radiation plate into a cleaning position, introducing a cleaning gas into the processing chamber and exposing the surface to UV radiation.
REFERENCES:
patent: 4699689 (1987-10-01), Bersin
patent: 5223112 (1993-06-01), Tepman
patent: 5478401 (1995-12-01), Tsunekawa et al.
patent: 5480492 (1996-01-01), Udagawa et al.
patent: 5531857 (1996-07-01), Engelsberg et al.
patent: 5863327 (1999-01-01), Thakur
PCT International Search Report dated Jun. 11, 1999.
K. Yamaguchi, Y. Uematsu, Y. Ikoma, F. Watanabe, T. Motooka and T. Igarashi, "Thermal Desorption Spectroscopy, and Molecular Beam Time-of-Flight Studies of Silicon Wafer Ultraviolet/Ozone Cleaning," J. Vac. Sci. Technol. B 15(2), Mar./Apr. 1997, pp. 277-281.
Alejandro Luz
Applied Materials Inc.
Dang Thi
LandOfFree
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