In-situ boron doped polysilicon with dual layer and dual grain s

Details In-situ boron doped polysilicon with dual layer and dual grain s In-situ boron doped polysilicon with dual layer and dual grain s

1999-01-15

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438510, 438522, 438542, 438546, 438547, 438548, 438558, H01L 2120

Patent

active

061627119

ABSTRACT:
A method and structure providing a dual layer silicon gate film having a uniform boron distribution therein and an ordered, uniform grain structure. Rapid thermal annealing is used to cause the diffusion of boron from an originally doped film to an originally undoped film, resulting in a uniform boron distribution within the structure, thereby rendering the structure resistant to vertical and lateral diffusion of the boron during subsequent processing at elevated temperatures.

REFERENCES:
patent: 5147820 (1992-09-01), Chittipeddi et al.
patent: 5298436 (1994-03-01), Radosevich et al.

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