In-situ bake step in plasma ash process to prevent corrosion

Details In-situ bake step in plasma ash process to prevent corrosion In-situ bake step in plasma ash process to prevent corrosion

1996-12-02

1998-11-24

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

430329, 134 11, H01L 2100

Patent

active

058402039

ABSTRACT:
The present invention describes a modified dry etching, or plasma ashing, method for removing photoresist residue which avoids corrosion of metal electrodes. The wafers are placed in a batch type plasma chamber and a radio frequency plasma is established while oxygen gas is flowed through the chamber. The radio frequency power is then removed and the wafers, still in the batch type plasma chamber, are baked either with no oxygen flow or with a low oxygen flow rate. The baking drives off chlorine and other ions which can cause metal corrosion. The wafers are then removed from the batch type plasma chamber and normal processing continues.

REFERENCES:
patent: 4281031 (1981-07-01), Hillman et al.
patent: 5174856 (1992-12-01), Hwang et al.
patent: 5200031 (1993-04-01), Latchford et al.
patent: 5399236 (1995-03-01), Ha et al.
patent: 5480748 (1996-01-01), Bakeman, Jr. et al.

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