In-situ and non-intrusive method for monitoring plasma etch cham

Details In-situ and non-intrusive method for monitoring plasma etch cham In-situ and non-intrusive method for monitoring plasma etch cham

1998-04-28

2000-05-30

Nuzzolillo, Maria

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

438 9, G01N 2100

Patent

active

060687835

ABSTRACT:
A spectroscopic method is disclosed to provide a non-intrusive and in-situ monitoring of plasma etching conditions during the fabrication of semiconductor devices using RF power. It includes the steps of: (a) selecting a single plasma gas as a probe, in a cleaned plasma etch chamber; (b) measuring the spectral intensities of the plasma gas; and (c) plotting the measured spectral intensities either directly or indirectly against the RF time. A single plasma gas is selected which exhibits opposite relationships with RF time at two respective wavelengths.

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