In-plane toroidal memory cell with vertically stepped...

Details In-plane toroidal memory cell with vertically stepped... In-plane toroidal memory cell with vertically stepped...

2005-06-14

2005-06-14

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S063000

Reexamination Certificate

active

06906947

ABSTRACT:
A magnetic random access memory device uses toroid-like magnetic memory cells. An axial opening extends through each of the memory cells and is generally aligned along a first axis. A first conductor and a second conductor pass through the axial opening of each memory cell and are generally aligned with the first axis.

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patent: 5587943 (1996-12-01), Torok et al.
patent: 6266289 (2001-07-01), Dubovik et al.
Jimmy Zhu and Gary A. Prinz, “VMRAM Memory Holds Both Promise and Challenges”, DATA Storage, Sep. 2000, 8 pgs.

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