Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-07-28
1996-12-31
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041922, 20429815, 20429816, C23C 1434
Patent
active
055890393
ABSTRACT:
Magnetic domains in a thin magnetic film on information storage devices are aligned during manufacture of the device, preferably at the time the film is deposited onto a substrate by sputtering. A compact magnetic field generator generates a parallel magnetic field across the substrate with a magnet assembly that is not larger than approximately twice the size of the substrate or not larger than the sputtering target cathode assembly. The magnet assembly includes an interior magnet with poles at opposite ends of the substrate and two side magnets having pole pieces spaced by an air gap from the poles of the interior magnet. The interior magnet preferably includes a central magnet and two intermediate magnets, which share the same pole pieces as the central magnet. The interior magnets are located between the central magnet and the side magnets. The magnets, which are preferably electromagnets, are adjusted by varying the current therethrough, preferably by adjusting the current of the intermediate magnets, or by moving the pole pieces to adjust the gaps between those of the side and interior magnets, until the field is parallel to within one degree. Magnetic devices, such as read and write heads, are produced from products of the process.
REFERENCES:
patent: 4422896 (1983-12-01), Class et al.
patent: 4525262 (1985-06-01), Class et al.
patent: 4581118 (1986-04-01), Class et al.
patent: 4657619 (1987-04-01), O'Donnell
patent: 5415754 (1995-05-01), Manley
patent: 5458759 (1995-10-01), Hosokawa et al.
Materials Research Corporation
Nguyen Nam
Sony Corporation
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