In-line test of contact opening of semiconductor device

Details In-line test of contact opening of semiconductor device In-line test of contact opening of semiconductor device

1997-07-29

1999-09-14

Dutton, Brian

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

250307, 250311, G01R 3126, H01L 2166, G01N 2300, G21K 700

Patent

active

059535792

ABSTRACT:
A method for testing a contact opening of a semiconductor device includes the steps of: inspecting a wafer using an in-line scanning electron microscope, comparing a contrast difference of contact opening regions displayed on the scanning electron microscope, and determining whether the processes for forming the contact openings have been performed correctly based on results of the comparison step. The test method may be performed after any of a contact photolithography process, contact etching process, or conductive layer etching process.

REFERENCES:
patent: 5214283 (1993-05-01), Le
patent: 5594245 (1997-01-01), Todokoro et al.

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