Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2010-08-04
2010-12-21
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C324S1540PB, C714S731000, C257S048000, C257SE21540
Reexamination Certificate
active
07855090
ABSTRACT:
A test circuit for, and method of, determining electrical properties of an underlying interconnect layer and an overlying interconnect layer of an integrated circuit (IC) and an IC incorporating the test circuit or the method. In one embodiment, the test circuit includes a gate chain having a ring path and a stage. In one embodiment, the stage includes: (1) a underlying test segment in the underlying interconnect layer, (2) a overlying test segment in the overlying interconnect layer and (3) logic circuitry activatible after formation of the underlying interconnect layer and before formation of the overlying interconnect layer to place the underlying test segment in the ring path and further activatible after the formation of the overlying interconnect layer to substitute the overlying test segment for the underlying test segment in the ring path.
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Kulkarni Makarand R.
Marshall Andrew
Brady III Wade J.
Dang Trung
Franz Warren L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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