In-line reliability test using E-beam scan

Radiant energy – Inspection of solids or liquids by charged particles – Methods

Reexamination Certificate

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C250S310000, C324S754120, C324S754120, C324S754120

Reexamination Certificate

active

07635843

ABSTRACT:
A method of testing a semiconductor wafer having a test structure performs an E-beam stress scan of the test structure in an E-beam system to electrically stress the test structure to produce a stress defect. An inspection scan is performed in the E-beam system to identify the stress defect.

REFERENCES:
patent: 6445199 (2002-09-01), Satya et al.
patent: 6891610 (2005-05-01), Nikoonahad et al.
Shimada, Akihiro et al., “Loop Before You Yield”, Accelerating Killer Defect Detection in the FEOL, winter 2005, p. 33-37, web pages; www.kla-tencor.com/magazine.

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