In-line depth measurement for thru silicon via

Details In-line depth measurement for thru silicon via In-line depth measurement for thru silicon via

2011-03-08

2011-03-08

Tsai, Carol S (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system

Dimensional determination

C702S179000, C438S014000, C438S017000, C438S016000, C438S048000, C438S050000, C438S372000, C257SE21530

Reexamination Certificate

active

07904273

ABSTRACT:
A system, method and device for measuring a depth of a Through-Silicon-Via (TSV) in a semiconductor device region on a wafer during in-line semiconductor fabrication, includes a resistance measurement trench structure having length and width dimensions in a substrate, ohmic contacts on a surface of the substrate disposed on opposite sides of the resistance measurement trench structure, and an unfilled TSV structure in semiconductor device region having an unknown depth. A testing circuit makes contact with the ohmic contacts and measures a resistance therebetween, and a processor connected to the testing circuit calculates a depth of the trench structure and the unfilled TSV structure based on the resistance measurement. The resistance measurement trench structure and the unfilled TSV are created simultaneously during fabrication.

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