Abrading – Precision device or process - or with condition responsive... – With indicating
Reexamination Certificate
2000-08-16
2002-01-15
Morgan, Eileen P. (Department: 3723)
Abrading
Precision device or process - or with condition responsive...
With indicating
C451S010000, C451S011000, C451S041000
Reexamination Certificate
active
06338668
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to chemical mechanical polish (CMP) planarizing methods for forming planarized layers within microelectronic fabrications. More particularly, the present invention relates to chemical mechanical polish (CMP) planarizing methods for forming, with enhanced properties, planarized layers within microelectronic fabrications.
2. Description of the Related Art
Microelectronic fabrications are formed from microelectronic substrates over which are formed patterned microelectronic conductor layers which are separated by microelectronic dielectric layers,
As microelectronic fabrication integration levels have increased and microelectronic device and patterned microelectronic conductor layer dimensions have decreased, it has become increasingly common within the art of microelectronic fabrication to employ planarizing methods, such as but not limited to chemical mechanical polish (CMP) planarizing methods, for forming planarized microelectronic layers within microelectronic fabrications. In turn, planarized microelectronic layers are desirable within microelectronic fabrications insofar as planarized microelectronic layers typically provide superior substrate surfaces upon which may be formed additional microelectronic layers within microelectronic fabrications.
While planarizing methods, such as but not limited to chemical mechanical polish (CMP) planarizing methods, are thus highly desirable in the art of microelectronic fabrication, planarizing methods, and in particular chemical mechanical polish (CMP) planarizing methods, are not entirely without problems in the art of microelectronic fabrication. In that regard, it is often difficult to form within microelectronic fabrications chemical mechanical polish (CMP) planarized layers with enhanced chemical mechanical polish (CMP) planarizing uniformity, such as but not limited to enhanced across-substrate chemical mechanical polish (CMP) planarizing uniformity, enhanced substrate-to-substrate within lot chemical mechanical polish (CMP) planarizing uniformity and enhanced lot-to-lot chemical mechanical polish (CMP) planarizing uniformity.
It is thus desirable within the art of microelectronic fabrication to provide chemical mechanical polish (CMP) planarizing methods, materials and apparatus which may be employed for forming within microelectronic fabrications chemical mechanical polish (CMP) planarized microelectronic layers with enhanced uniformity.
It is towards the foregoing object that the present invention is directed.
Various chemical mechanical polish (CMP) planarizing methods, materials and apparatus have been disclosed in the art of microelectronic fabrication for forming, with desirable properties, chemical mechanical polish (CMP) planarized microelectronic layers within microelectronic fabrications.
For example, Koos et al., in U.S. Pat. No. 5,413,941, discloses a chemical mechanical polish (CMP) planarizing method and a chemical mechanical polish (CMP) planarizing apparatus for forming, with an enhanced chemical mechanical polish (CMP) planarizing endpoint detection capability, a chemical mechanical polish (CMP) planarized microelectronic layer within a microelectronic fabrication. To realize the foregoing object, the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus employ an optical endpoint detection scheme which in turn employs a laser light beam reflected from an edge of a substrate which is chemical mechanical polish (CMP) planarized while employing the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus, and further wherein the laser light beam has an incidence of at least about 70 degrees with respect to a normal to a surface of the substrate which is chemical mechanical polish (CMP) planarized while employing the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus.
In addition, Mei, in U.S. Pat. No. 6,007,405, also discloses a chemical mechanical polish (CMP) planarizing method and a chemical mechanical polish (CMP) planarizing apparatus for forming, with an enhanced chemical mechanical polish (CMP) planarizing endpoint detection capability, a chemical mechanical polish (CMP) planarized microelectronic layer within a microelectronic fabrication. To realize the foregoing object, the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus employ an electrical resistive lapping monitor when chemical mechanical polish (CMP) planarizing a microelectronic layer within a microelectronic fabrication while employing the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus.
Further, Sandhu, in U.S. Pat. No. 6,007,408, similarly also discloses a chemical mechanical polish (CMP) planarizing method and a chemical mechanical polish (CMP) planarizing apparatus for forming, with an enhanced chemical mechanical polish (CMP) planarizing endpoint detection capability, a chemical mechanical polish (CMP) planarized microelectronic layer within a microelectronic fabrication. To realize the foregoing object, the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus employ a thermal emission measurement from a thermally sensitive component formed upon an exposed surface of a substrate which is chemical mechanical polish (CMP) planarized while employing the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus.
Finally, Sun et al., in U.S. Pat. No. 6,010,538, similarly also disclose a chemical mechanical polish (CMP) planarizing method and a chemical mechanical polish (CMP) planarizing apparatus for forming, with an enhanced chemical mechanical polish (CMP) planarizing endpoint detection capability, a chemical mechanical polish (CMP) planarized microelectronic layer within a microelectronic fabrication. To realize the foregoing object, the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish planarizing apparatus employ a radiation sensor coupled to a chuck which is employed for rotating a substrate within the chemical mechanical polish (CMP) planarizing method and the chemical mechanical polish (CMP) planarizing apparatus, and further wherein the radiation sensor is coupled with a chemical mechanical polish (CMP) planarizing apparatus controller absent use of physical transmission media such as an electrical cabling assembly or an optical fiber cabling assembly.
Desirable in the art of microelectronic fabrication are additional methods, materials and apparatus which may be employed for forming, with enhanced uniformity, chemical mechanical polish (CMP) planarized microelectronic layers within microelectronic fabrications.
It is towards the foregoing object that the present invention is directed.
SUMMARY OF THE INVENTION
A first object of the present invention is to provide a chemical mechanical polish (CMP) planarizing method for forming a chemical mechanical polish (CMP) planarized microelectronic layer within a microelectronic fabrication.
A second object of the present invention is to provide a chemical mechanical polish (CMP) planarizing method in accord with the first object of the present invention, wherein the chemical mechanical polish (CMP) planarized microelectronic layer is formed with enhanced uniformity.
A third object of the present invention is to provide a chemical mechanical polish (CMP) planarizing method in accord with the first object of the present invention and the second object of the present invention, which method is readily commercially implemented.
In accord with the objects of the present invention, there is provided by the present invention a chemical mechanical polish (CMP) planarizing method for forming a chemical mechanical polish (CMP) planarized layer withi
Chien Wen-Cheng
Lin Chih-Lung
Morgan Eileen P.
Taiwan Semiconductor Manufacturing Company Ltd
Tung & Associates
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