Impurity introducing apparatus and impurity introducing method

Details Impurity introducing apparatus and impurity introducing method Impurity introducing apparatus and impurity introducing method

2008-05-16

2009-11-24

Vanore, David A (Department: 2881)

Radiant energy

Irradiation of objects or material

Ion or electron beam irradiation

C250S492100, C250S492210

Reexamination Certificate

active

07622725

ABSTRACT:
It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

REFERENCES:
patent: 4803947 (1989-02-01), Ueki et al.
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 5561072 (1996-10-01), Saito
patent: 5858106 (1999-01-01), Ohmi et al.
patent: 5858863 (1999-01-01), Yokoyama et al.
patent: 6007675 (1999-12-01), Toshima
patent: 6036772 (2000-03-01), Hino et al.
patent: 6099598 (2000-08-01), Yokoyama et al.
patent: 6207005 (2001-03-01), Henley et al.
patent: 6321134 (2001-11-01), Henley et al.
patent: 6329229 (2001-12-01), Yamazaki et al.
patent: 6391114 (2002-05-01), Kirimura
patent: 6403410 (2002-06-01), Ohira et al.
patent: 6503365 (2003-01-01), Kim et al.
patent: 6541353 (2003-04-01), Sandhu et al.
patent: 6576061 (2003-06-01), Moriyama et al.
patent: 6725119 (2004-04-01), Wake
patent: 6726776 (2004-04-01), Mosely et al.
patent: 6897100 (2005-05-01), Yamazaki et al.
patent: 7090741 (2006-08-01), Narushima et al.
patent: 2003/0029833 (2003-02-01), Johnson
patent: 2003/0073318 (2003-04-01), Sandhu et al.
patent: 2004/0040504 (2004-03-01), Yamazaki et al.
patent: 2004/0107020 (2004-06-01), Yokoyama et al.
patent: 2004/0211356 (2004-10-01), Yamazaki et al.
patent: 2005/0051271 (2005-03-01), Collins et al.
patent: 2005/0126487 (2005-06-01), Tabuchi et al.
patent: 2006/0011213 (2006-01-01), Moriya et al.
patent: 2006/0260545 (2006-11-01), Ramaswamy et al.
patent: 1 054 433 (2000-11-01), None
patent: 58-180227 (1983-10-01), None
patent: SHO-62-69511 (1987-03-01), None
patent: 5-314944 (1993-11-01), None
patent: 7-122622 (1995-05-01), None
patent: 7-58695 (1995-06-01), None
patent: 7-142421 (1995-06-01), None
patent: 10-27771 (1998-01-01), None
patent: 2780419 (1998-05-01), None
patent: 2001-102347 (2001-04-01), None
patent: 2004-71774 (2004-03-01), None
patent: 2004-87600 (2004-03-01), None
patent: 2004-179592 (2004-06-01), None
patent: 2004-519070 (2004-06-01), None
patent: 2001-0035947 (2001-05-01), None
patent: 2002-0067829 (2002-08-01), None
patent: WO 2004/075274 (2004-09-01), None
patent: WO 2005/020306 (2005-03-01), None
patent: WO 2006/064772 (2006-06-01), None
Sasaki, Y., et al., “B2H6Plasma Doping with ‘In-situ He Pre-amorphization’”, 2 pages.
Sasaki, Y., et al., “Helicon Wave Plasma Doping System”, Extended Abstracts of International Workshop on Junction Technology, 2002, Japan Society of Applied Physics.
Liebert, R.B., et al., “Plasma doping system for 200 and 300 mm wafers”, Conference on Ion Implantation Technology, 2000, pp. 472-475, IEEE, Alpbach, Austria.
Higaki, R., et al., “Effects of gas phase absorption into Si substrates on plasma doping process”, 2003, pp. 231-234, IEEE.
Sato, T., et al., “Effects of wet cleaning treatment on dose of impurity after plasma doping”, Proceeding of the 34th European Solid-State Device Research Conference 2004, ESSDERC 2004, Sep. 21-23, 2004, pp. 149-152, IEEE.
Tsutsui, K., et al., “Effects of substrate surface conditions on dose controllability of plasma doping process”, Proceedings on 7th International Conference on Solid-State and Integrated Circuits Technology 2004, Oct. 18-21, 2004, pp. 439-444, vol. 1, IEEE.
Cho, W., et al., “Elevated temperature plasma doping technology for sub-50 nm SOI n-MOSFETs”, The Fourth International Workshop on Junction Technology, 2004 IWJT '04, Mar. 15-16, 2004, pp. 62-64, IEEE.
Baek, S., et al., “Characteristics of HfO2pMOSFET Prepared by B2H6Plasma Doping and KrF Excimer Laser Annealing”, IEEE Electron Device Letters, Mar. 2005, pp. 157-159, vol. 26, No. 3, IEEE.
Walther, S.R., et al., “Shallow Junction Technology for Advanced CMOS Devices—Transitioning to Plasma Doping from Beamline Implantation”, 2002, pp. 103-106, IEEE.
Bright, AA, “Gate Quality Thin Oxide by Plasma Oxidation in a Very Dilute Oxygen Plasma”, IBM Technical Disclosure Bulletin, Dec. 1990, pp. 446-447.
Eldridge, J.M., et al., “Novel Process for Patterning Photoresists Suitable for Metal RIE Advanced lc Fabrication” IBM Technical Disclosure Bulletin, Nov. 1985, p. 2500.

Affiliated with

Also associated with

Rating

Impurity introducing apparatus and impurity introducing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Impurity introducing apparatus and impurity introducing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impurity introducing apparatus and impurity introducing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4065890