Impurity-activating thermal process method and thermal...

Details Impurity-activating thermal process method and thermal... Impurity-activating thermal process method and thermal...

2011-07-19

2011-07-19

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

By differential heating

C438S530000, C438S535000, C438S795000, C438S796000, C438S797000

Reexamination Certificate

active

07981816

ABSTRACT:
An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.

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Quirk et al. Semicondcutor Manufacturing Technology, 2001, Prentice Hall, Inc. Upper Saddle River, NJ. pp. 500-501.

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