Improved ion implantation using a variable mass resolving system

Details Improved ion implantation using a variable mass resolving system Improved ion implantation using a variable mass resolving system

1990-12-17

1992-07-14

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, 250398, H01J 37317

Patent

active

051305526

ABSTRACT:
An ion implantation system is modified to allow variation in the size of the aperture of the mass resolving system, thereby allowing more ions of one mass or ion of more than one mass, such as isotopes, to pass through said opening. Including all isotopes of the desired dopant ions to be collected increases beam current, and consequently the throughput of the implantation process, reduces contamination, and improves the dosage control.

REFERENCES:
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patent: 4667111 (1987-05-01), Glavish et al.
patent: 4743767 (1988-05-01), Plumb et al.
patent: 4754200 (1988-06-01), Plumb et al.
patent: 4757208 (1988-07-01), McKenna et al.
patent: 4881010 (1989-11-01), Jetter
patent: 5025167 (1991-06-01), Okuda et al.

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