Imprint process using polyhedral oligomeric silsesquioxane...

Details Imprint process using polyhedral oligomeric silsesquioxane... Imprint process using polyhedral oligomeric silsesquioxane...

2006-04-05

2008-12-23

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C216S045000

Reexamination Certificate

active

07468330

ABSTRACT:
A method of forming a structure. The method including: forming a layer of a polymerizable composition including one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, one or more polymerizable diluents, one or more photoacid generators and/or one or more photoinitiators; pressing a surface of a template having a relief pattern into the layer, the template, the layer filling voids in the relief pattern; polymerizing the layer to have thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the dielectric layer; and either curing the layer to create a porous dielectric layer followed by filling spaces between the thick regions of the porous dielectric layer with an electrically conductive material or filling spaces between the thick regions of the dielectric layer with an electrically conductive material followed by curing the dielectric layer to create a porous dielectric layer.

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