Implementing boosted wordline voltage in memories

Details Implementing boosted wordline voltage in memories Implementing boosted wordline voltage in memories

2011-04-12

2011-04-12

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S189090, C365S203000, C365S185230, C365S230060

Reexamination Certificate

active

07924633

ABSTRACT:
A method and wordline voltage boosting circuit for implementing boosted wordline voltage in memories, and a design structure on which the subject circuit resides are provided. The wordline voltage boosting circuit receives a precharge signal, uses a switching transistor coupled to a bootstrap capacitor, and generates a boosted voltage level responsive to the precharge signal. The boosted voltage level is applied to a voltage supply of an output stage of a wordline driver, causing the wordline voltage level of a selected wordline to be boosted. The switching transistor is controlled by the precharge signal and a node of the bootstrap capacitor supplying the boosted voltage level is driven high by the switching transistor.

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