Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-31
2006-01-31
Zarneke, David (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S678000, C438S658000, C438S637000, C438S687000, C438S659000
Reexamination Certificate
active
06992004
ABSTRACT:
A method for manufacturing an integrated circuit having improved electromigration characteristics includes forming an aperture in an interlevel dielectric layer and providing a barrier layer in the aperture. The aperture is filled with a metal material and a barrier layer is provided above the metal material. An intermetallic region can be formed at an interface of the metal material and the barrier layer. The intermetallic material can be formed by implantation of species.
REFERENCES:
patent: 5882738 (1999-03-01), Blish et al.
patent: 6071807 (2000-06-01), Watanabe et al.
patent: 6096648 (2000-08-01), Lopatin et al.
patent: 6117770 (2000-09-01), Pramanick et al.
patent: 6500749 (2002-12-01), Liu et al.
patent: 6589874 (2003-07-01), Andricacos et al.
patent: 6642623 (2003-11-01), McTeer
patent: 6703307 (2004-03-01), Lopatin et al.
patent: 2002/0076925 (2002-06-01), Marieb et al.
patent: 2003/0104692 (2003-06-01), Hau-Riege et al.
patent: 2003/0194857 (2003-10-01), Hau-Riege et al.
Besser Paul R.
Buynoski Matthew S.
Lopatin Sergey D.
Romero Jeremias D.
Tran Minh Q.
Anya Igwe U.
Foley & Lardner LLP
Zarneke David
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