Implantation quality improvement by xenon/hydrogen dilution gas

Details Implantation quality improvement by xenon/hydrogen dilution gas Implantation quality improvement by xenon/hydrogen dilution gas

2011-07-05

2011-07-05

Nguyen, Kiet T (Department: 2881)

Radiant energy

Ion generation

Arc type

C250S42300F, C250S424000

Reexamination Certificate

active

07973293

ABSTRACT:
A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.

REFERENCES:
patent: 7586109 (2009-09-01), Perel et al.
patent: 2008/0179545 (2008-07-01), Perel
Designing Tracks for Better CD Control—Sep. 1, 2003—Semiconductor International, pp. 1 of 9 at http://www.semiconductor.net/article/CA319214.html Dec. 14, 2008.

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