Implantation of nucleating species for selective metallization a

Details Implantation of nucleating species for selective metallization a Implantation of nucleating species for selective metallization a

1993-03-23

1997-08-05

Fourson, George

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

427304, 427305, 427437, 438675, 438677, 438641, H01L 21285, H01L 21465

Patent

active

056542453

ABSTRACT:
The invention provides a method and structure in which a nucleating species [54] is implanted through apertures [52] of a metal-phobic layer [40] into a support layer [17] and copper or a like metal is selectively grown at the implant site or sites. The implant support layer [17] is preferably composed of a material which inhibits diffusion therethrough of the copper or other like grown metal.

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D.C. Thomas et al., "A Multilevel Tungsten Interconnect Technology", Tech Digest, IEDM 1988, pp. 466-469.
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D.S. Gardner et al., "Encapsulated Copper Interconnection Devices Using Sidewall Barriers", VMIC Conference Proceedings, Jun. 1991, pp. 99-108.
J.A.T. Normal et al., "New OMCVD Precursors For Selective Copper Metallization", VMIC Conference Proceedings, Jun. 1991, pp. 123-129.
J.D. McBrayer et al., "Diffusion of Metals in Silicon Dioxide", J. Electrochem. Soc., vol. 133, Jun. 1986, pp. 1242-1246.
S. Wolf et al., "Silicon Processing for the VLSI Era", Process Technology, vol. 1 & 2 Lattice Press (1986), pp. 261, 403.

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