Implantation of deuterium in MOS and DRAM devices

Details Implantation of deuterium in MOS and DRAM devices Implantation of deuterium in MOS and DRAM devices

2006-08-08

2006-08-08

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S530000

Reexamination Certificate

active

07087507

ABSTRACT:
A structure and method passivates dangling silicon bonds by the introduction of deuterium into a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) by ion implantation. The process of implantation provides precise placement of deuterium at optimum locations within the gate stack to create stable silicon-deuterium bond terminations at the Si—SiO2interface within the gate-channel region. The deuterium is encapsulated in the MOSFET by the use of a Silicon Nitride (SiN) barrier mask. The ability of deuterium to passivate dangling silicon bonds is maximized by removing hydrogen present in the MOSFET and by use of an absorption layer to create a deuterium rich region.

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