Implantation of a semiconductor substrate with controlled amount

Details Implantation of a semiconductor substrate with controlled amount Implantation of a semiconductor substrate with controlled amount

1995-08-31

1996-12-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437 44, H01L 21265

Patent

active

055852866

ABSTRACT:
A process and resulting product are described for controlling the channeling and/or diffusion of a boron dopant in a P- region forming the lightly doped drain (LDD) region of a PMOS device in a single crystal semiconductor substrate, such as a silicon substrate. The channeling and/or diffusion of the boron dopant is controlled by implanting the region, prior to implantation with a boron dopant,, with noble gas ions, such as argon ions, at a dosage at least equal to the subsequent dosage of the implanted boron dopant, but not exceeding an amount equivalent to the implantation of about 3.times.10.sup.13 argon ions/cm.sup.2 into a silicon substrate, whereby channeling and diffusion of the subsequently implanted boron dopant is inhibited without, however, amorphizing the semiconductor substrate.

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