Implant uniformity control

Details Implant uniformity control Implant uniformity control

2008-10-02

2010-10-26

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S3960ML, C250S42300F, C250S424000

Reexamination Certificate

active

07820988

ABSTRACT:
An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.

REFERENCES:
patent: 6879109 (2005-04-01), Benveniste et al.
patent: 7589333 (2009-09-01), Graf et al.
patent: 2008/0078957 (2008-04-01), Graf et al.

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