Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1997-06-03
1999-12-21
Booth, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438683, H01L 213205, H01L 214763
Patent
active
060048719
ABSTRACT:
A method of forming silicided narrow (i.e., sub-0.25 .mu.m) polysilicon lines. A layer of titanium is deposited over a semiconductor body having polysilicon lines formed thereon Either before or after the titanium deposition and before the react step, an implant is performed using a gas that will not poison the subsequent silicidation reaction. Exemplary gases include the noble element gases such as argon, krypton, xenon, and neon. The titanium is then reacted with the polysilicon lines to form titanium silicide. The gas implant causes the C49 grain size of the titanium silicide to be reduced, which makes the transformation to the C54 phase easier. Finally, an anneal is performed to transform the titanium silicide from the C49 phase to the C54 phase.
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Joyner Keith A.
Kittl Jorge Adrian
Misium George R.
Booth Richard
Brady Wade James
Donaldson Richard L.
Garner Jacqueline J.
Texas Instruments Incorporated
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