Impedance modulated CMOS RAM cell

Details Impedance modulated CMOS RAM cell Impedance modulated CMOS RAM cell

1982-11-04

1986-01-28

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365181, 365190, G11C 1140

Patent

active

045675775

ABSTRACT:
A random access memory cell of complementary field effect transistors that include a bit storage latch for storing binary bit information connected to a word address line and a data address line. The data address line provides bit information to the latch. This bit data is stored in the latch when the word address line is active. A switching circuit is connected to the latch that enables new data to be stored in the latch by removing the previously stored data during the time that the new data is being stored.

REFERENCES:
patent: 3968479 (1976-07-01), Goser

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