Immunity of phase change material to disturb in the...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000

Reexamination Certificate

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07990761

ABSTRACT:
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.

REFERENCES:
patent: 4827084 (1989-05-01), Yavniv et al.
patent: 5406509 (1995-04-01), Ovshinsky et al.
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6531373 (2003-03-01), Gill et al.
patent: 6590807 (2003-07-01), Lowrey
patent: 6660356 (2003-12-01), Kitaura et al.
patent: 6791107 (2004-09-01), Gill et al.
patent: 6813177 (2004-11-01), Lowrey et al.
patent: 6831856 (2004-12-01), Pashmakov
patent: 6859390 (2005-02-01), Pashmakov
patent: 6914255 (2005-07-01), Lowrey
patent: 6914801 (2005-07-01), Kostylev et al.
patent: 7099180 (2006-08-01), Dodge et al.
patent: 7099200 (2006-08-01), Sakui
patent: 7106623 (2006-09-01), Hung et al.
patent: 2002/0081804 (2002-06-01), Gill et al.
patent: 2003/0132501 (2003-07-01), Gill et al.
patent: 2004/0178404 (2004-09-01), Ovshinsky
patent: 2004/0202017 (2004-10-01), Lee
patent: 2004/0257848 (2004-12-01), Chen et al.
patent: 2005/0029505 (2005-02-01), Lowrey
patent: 2005/0041467 (2005-02-01), Chen
patent: 2005/0180216 (2005-08-01), Lowrey
patent: 2005/0185445 (2005-08-01), Osada et al.
patent: 2005/0254291 (2005-11-01), Happ et al.
patent: 2006/0092693 (2006-05-01), Chen
patent: 2006/0118774 (2006-06-01), Ovshinsky
patent: 2007/0008786 (2007-01-01), Scheuerlein
patent: 2009/0003034 (2009-01-01), Happ et al.
patent: 2009/0302293 (2009-12-01), Morikawa et al.
Ovshinsky, “Innovation Providing New Multiple Functions in Phase-Change Materials to Achieve Cognitive Computing”, Materials Research Society Symposium Proceedings, v. 803, 2004.
Lowrey et al. “Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications”, Materials Research Society Symposium Proceedings v. 803, 2004, paper HH2.1.
Ovshinsky, “Ovonic chalcogenide non-binary electrical and optical devices”, Proceedings of SPIE, vol. 5966, Seventh International Symposium on Optical Storage (2005).
Pirovano et al., “Reliability Study of Phase-Change Nonvolatile Memories”, Device and IEEE Transactions on Materials Reliability, vol. 4 , Issue 3, Sep. 2004, pp. 422-427.
Kim et al., “Reliability investigations for manufacturable high density PRAM”, 43rd Annual IEEE International Reliability Physics Symposium, Apr. 17-21, 2005 pp. 157-162.
Bedeschi et al., “4-Mb MOSFET-selected phase-change memory experimental chip”, Proceeding of the 30th European Solid-State Circuits Conference, 2004, Sep. 21-23, 2004, pp. 207-210.
Bedeschi et al., “A fully symmetrical sense amplifier for non-volatile memories”, Proceedings of the 2004 International Symposium on Circuits and Systems, vol. 2, May 23-26, 2004, p. II-625-628.
Mohammad, “Phase Change Memory Faults” Proc. 19th International Conference on VLSI Design, 2006 (held jointly with 5th International Conference on Embedded Systems and Design), 01/03-07-2006, pp. 108-112.
Bo et al., “Novel Material for Nonvolatile Ovonic Unified Memory (OUM)—AG11IN12Te26Sb51 Phase Change Semiconductor”, 2004 Chinese Phys. Soc and IOP Publishing Ltd., vol. 13, No. 7, Jul. 2004, 1009-1963, pp. 1167-1170.
Bedeschi et al., “A Multi-Level-Cell Bipolar-Selected Phase-Change Memory”, 2008 IEEE International Solid-State Circuits Conference, pp. 428, 429, 630, Feb. 6, 2008.
Chen et al., “An Access-Transistor-Free (0T/1R) Non-Volatile Resistance Random Access Memory (RRAM) Using a Novel Threshold Switching, Self-Rectifying Chalcogenide Device”, Electron Device Meeting, 2003, IDEM 2003 Technical Digest, IEEE International, pp. 37.4.1-37.4.4.

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