Immersion lithography contamination gettering layer

Details Immersion lithography contamination gettering layer Immersion lithography contamination gettering layer

2005-06-03

2010-10-05

Duda, Kathleen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S327000, C430S961000

Reexamination Certificate

active

07807335

ABSTRACT:
A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.

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Ohmi et al.; Metallic Impurities Segregation at the Interface Between Si Wafer and Liquid during Wet Cleaning; J. Electrochem. Soc., vol. 139, No. 11; Nov. 1992; The Electrochemical Society Inc; pp. 3317-3335.

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