Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-07-22
2011-12-13
Reames, Matthew (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S435000, C257S443000, C257S433000
Reexamination Certificate
active
08076745
ABSTRACT:
An imaging photodetection device includes a plurality of photodetectors (6) arrayed on a substrate (5) one-dimensionally or two-dimensionally, a low refractive index transparent layer (12) formed above the plural photodetectors, and a plurality of columnar or plate-like high refractive index transparent sections (13) embedded in the low refractive index transparent layer along the array direction of the plural photodetectors. At least two of the photodetectors correspond to one of the high refractive index transparent sections. Light entering the low refractive index transparent layer and the high refractive index transparent sections passes therethrough to be separated into a 0th-order diffracted light, a 1st-order diffracted light and a −1st-order diffracted light by a phase shift occurring on the wavefront. Thereby, improvement in the efficiency for light utilization and pixel densification can be realized.
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Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
Reames Matthew
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