Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2007-11-20
2007-11-20
McPherson, John A. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S319000, C430S320000, C430S323000, C430S324000, C430S330000
Reexamination Certificate
active
10751807
ABSTRACT:
A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.
REFERENCES:
patent: 2003/0182790 (2003-10-01), Hsiao et al.
patent: 2001-344711 (2001-12-01), None
Cornwell Dwight
Werner Douglas Johnson
Hitachi Global Storage Technologies - Netherlands B.V.
McPherson John A.
Zilka-Kotab, PC
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