Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-02-01
2011-02-01
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE27134, C257SE31054, C257SE31093, C257SE31121, C257SE31122, C257SE31123, C438S070000, C438S073000
Reexamination Certificate
active
07880257
ABSTRACT:
An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.
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Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Soward Ida M
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