Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-11-08
2005-11-08
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S230000, C257S445000
Reexamination Certificate
active
06963092
ABSTRACT:
A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charges may be generated in the photodetector, the excess charges flow into the power supply through the bypass device. Blooming can thereby be reduced or suppressed.
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Office Action, Korean Application No. 2003-29877, Apr. 30, 2004.
Le Thao X.
Myers Bigel & Sibley & Sajovec
Pham Long
Samsung Electronics Co,. Ltd.
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