Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-07-07
2009-06-02
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S258000, C257S291000, C257S292000, C257SE27133
Reexamination Certificate
active
07541628
ABSTRACT:
In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.
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Lee Duck-hyung
Lee Kang-bok
Lee Seok-ha
Ahmed Selim
Pert Evan
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
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