Image sensors for reducing dark current and methods of...

Details Image sensors for reducing dark current and methods of... Image sensors for reducing dark current and methods of...

2007-02-20

2008-08-12

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000

Reexamination Certificate

active

07410823

ABSTRACT:
An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over the photodiode region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.

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English language translation of Japanese patent publication 2003-188367 to Ishiwatari et al., Oct. 2007.

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