Image sensor with surface regions of different doping

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S461000, C257S463000, C257SE31003, C257SE31032

Reexamination Certificate

active

10878109

ABSTRACT:
A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

REFERENCES:
patent: 6404029 (2002-06-01), Hosokawa et al.
patent: 6590242 (2003-07-01), Kozuka et al.
patent: 6632701 (2003-10-01), Merrill
patent: 6956273 (2005-10-01), Koizumi
patent: 2001/0038096 (2001-11-01), Fukushima et al.
patent: 2003/0030083 (2003-02-01), Lee et al.
patent: 2003/0057431 (2003-03-01), Kozuka et al.
patent: 2003/0098454 (2003-05-01), Maeda et al.
patent: 2003/0193586 (2003-10-01), Hayakawa
patent: 2004/0046193 (2004-03-01), Park et al.
patent: 2004/0046194 (2004-03-01), Kozuka et al.
patent: 2004/0188727 (2004-09-01), Patrick
patent: 62-131566 (1987-06-01), None
patent: 01-216581 (1989-08-01), None
patent: 05-243549 (1993-09-01), None
patent: 11-068077 (1999-03-01), None
patent: 2000-312024 (2000-11-01), None
patent: 2001-77401 (2001-03-01), None
patent: 2001-284629 (2001-10-01), None

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