Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-05
2011-07-05
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S462000
Reexamination Certificate
active
07973346
ABSTRACT:
Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.
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patent: 6780666 (2004-08-01), McClure
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Oh Tae-seok
Park Won-Je
Park Young-Hoon
Song Jae-ho
F. Chau & Associates LLC
Samsung Electronic Co. Ltd.
Vu Hung
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