Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-10-17
2006-10-17
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S079000, C257S082000, C257S113000, C257S114000, C257S118000, C257S431000, C257S432000, C257S435000, C257S444000, C257S446000, C257S466000, C257SE31101, C257SE31102, C257SE31103, C257SE31108
Reexamination Certificate
active
07122840
ABSTRACT:
An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substrate. The photosensor and the light emitting element are isolated by the shallow trench isolation structure. An opening is formed in the shallow trench isolation structure to expose part of the substrate. An opaque shield is formed in the opening to prevent photons from the light emitting element from striking the photosensor.
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Fang Yean-Kuen
Hsu Tzu-Hsuan
Yaung Dun-Nian
Birch Stewart Kolasch & Birch, LLP.
Soward Ida M.
Taiwan Semiconductor Manufacturing Co. Ltd.
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