Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-02
2007-10-02
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S222000, C257S229000, C257S234000, C257S257000, C257S258000, C257S290000, C257S291000
Reexamination Certificate
active
11361426
ABSTRACT:
A microcrystalline germanium image sensor array. The array includes a number of pixel circuits fabricated in or on a substrate. Each pixel circuit comprises a charge collecting electrode for collecting electrical charges and a readout means for reading out the charges collected by the charge collecting electrode. A photodiode layer of charge generating material located above the pixel circuits convert electromagnetic radiation into electrical charges. This photodiode layer includes microcrystalline germanium and defines at least an n-layer, and i-layer and a p-layer. The sensor array also includes and a surface electrode in the form of a grid or thin transparent layer located above the layer of charge generating material. The sensor is especially useful for imaging in visible and near infrared spectral regions of the electromagnetic spectrum and provides imaging with starlight illumination.
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Chao Calvin
Engelman Michael G.
Hsieh Teu Chiang
Martin Peter
Pender Milan
e-Phocus, Inc.
Pert Evan
Ross John R.
Tran Tan
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