Image sensor with inter-pixel isolation

Details Image sensor with inter-pixel isolation Image sensor with inter-pixel isolation

2007-01-31

2008-10-28

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S141000

Reexamination Certificate

active

07442974

ABSTRACT:
An image sensor with a plurality of photodiodes that each have a first region constructed from a first type of material and a second region constructed from a second type of material. Located adjacent to the first region and between second regions of adjacent photodiodes is a barrier region. The photodiodes are reversed biased to create depletion regions within the first regions. The barrier region limits the lateral growth of the depletions regions and inhibits depletion merger between adjacent photodiodes.

REFERENCES:
patent: 6169318 (2001-01-01), McGrath
patent: 6795117 (2004-09-01), Tay
patent: 6878568 (2005-04-01), Rhodes et al.
patent: 6909162 (2005-06-01), Wu et al.
patent: 7091536 (2006-08-01), Rhodes et al.

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