Image sensor with improved surface depletion

Details Image sensor with improved surface depletion Image sensor with improved surface depletion

2006-01-09

2009-11-17

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S233000, C257S239000, C257S458000, C257SE27132, C257SE27133

Reexamination Certificate

active

07619266

ABSTRACT:
An image sensor device having a pixel cell with a pinned photodiode, which utilizes the fixed charge of an high K dielectric layer over the n-type region for the pinning effect without implanting a p-type layer over the n-type region, and methods of forming such a device.

REFERENCES:
patent: 6023081 (2000-02-01), Drowley et al.
patent: 6140630 (2000-10-01), Rhodes
patent: 6204524 (2001-03-01), Rhodes
patent: 6278102 (2001-08-01), Hook et al.
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6333205 (2001-12-01), Rhodes
patent: 6376868 (2002-04-01), Rhodes
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 6847051 (2005-01-01), Hong
patent: 2002/0117690 (2002-08-01), Rhodes
patent: 2003/0228736 (2003-12-01), Kimura
patent: 2004/0229424 (2004-11-01), Fischer et al.
patent: 2005/0274994 (2005-12-01), Rhodes
patent: 2006/0054937 (2006-03-01), Lucovsky et al.
patent: 2006/0084195 (2006-04-01), Lyu
patent: 04 038872 (1992-02-01), None
patent: 04038872 (1992-02-01), None
International Preliminary Report on Patentability dated Jul. 15, 2008, issued in PCT Application No. PCT/US2007/000408.
Manchanda, L., et al., Si-Duped Aluminates for High Temperature Metal-Gate CMOS: Zr-Al-Si-O, A Novel Gate Dielectric for Low Power Applications, Bell Laboratores, Lucent Technologies, Murray Hill, N.J. 07974, (2000).
Park< Hong Bae, et al., Effects of Plasma Nitridation of Al2O3Interlayer on Thermal Stability, Fixed Charge Density, and Interfacial Trap States of HfO2Gate Dielectric Films Grown by Atomic Layer Deposition, Journal of Applied Physics, vol. 94, No. 3, Aug. 1, 2003.

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