Image sensor with improved charge transfer efficiency and...

Details Image sensor with improved charge transfer efficiency and... Image sensor with improved charge transfer efficiency and...

2008-03-18

2008-03-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21043

Reexamination Certificate

active

11192851

ABSTRACT:
An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer; a second spacer formed on each sidewall of the first spacer; a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and a fourth impurity region of a second conductive type beneath the third impurity region.

REFERENCES:
patent: 6372591 (2002-04-01), Mineji et al.

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