Image sensor with improved charge transfer efficiency and...

Details Image sensor with improved charge transfer efficiency and... Image sensor with improved charge transfer efficiency and...

2008-03-18

2008-03-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21043

Reexamination Certificate

active

07344964

ABSTRACT:
An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer; a second spacer formed on each sidewall of the first spacer; a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and a fourth impurity region of a second conductive type beneath the third impurity region.

REFERENCES:
patent: 6372591 (2002-04-01), Mineji et al.

Affiliated with

Also associated with

Rating

Image sensor with improved charge transfer efficiency and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor with improved charge transfer efficiency and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor with improved charge transfer efficiency and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2791261