Image sensor with high fill factor pixels and method for...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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Details

C250S208100, C257S431000, C257S509000, C257S510000

Reexamination Certificate

active

07667183

ABSTRACT:
An image sensor comprising an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively, a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column, and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements. In one embodiment, the photoelectric conversion elements have a first pitch in the first direction and have a second pitch in the second direction and the first pitch is substantially equal for the photoelectric conversion elements of a common row, and the second pitch is substantially equal for the photoelectric conversion elements of a common column.

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Lee, Seok-ha, et al.,; The Features and Characteristics of 5-Mega CMOS Image Sensor with Topologically Unique 1.7 μm×1.7 μm Pixels; Jun. 13-15, 2006, pp. 142-143; VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium.

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