Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-19
2008-09-23
Lateef, Marvin M. (Department: 4146)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S225000, C257S229000, C348S308000, C348S310000
Reexamination Certificate
active
07427790
ABSTRACT:
An image sensor having a plurality of pixels; each pixel includes one or more photosensitive elements that collect charge in response to incident light; one or more transfer mechanisms that respectively transfer the charge from the one or more photosensitive elements; a charge-to-voltage conversion region having a capacitance, and the charge-to-voltage region receives the charge from the one or more photosensitive elements; a first reset transistor connected to the charge-to-voltage conversion region; a second reset transistor connected to the first reset transistor, which in combination with the first reset transistor, selectively sets the capacitance of the charge-to-voltage conversion regions from a plurality of capacitances.
REFERENCES:
patent: 6730897 (2004-05-01), Guidash
patent: 6960796 (2005-11-01), Rhodes et al.
patent: 7030357 (2006-04-01), Lee
patent: 7075049 (2006-07-01), Rhodes et al.
patent: 2006/0103749 (2006-05-01), He
Eastman Kodak Company
Harriston William A
Lateef Marvin M.
Watkins Peyton C.
LandOfFree
Image sensor with gain control does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Image sensor with gain control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor with gain control will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3975371